Gallium Nitride (GaN) devices are becoming an attractive option in industry to achieve high-power-density and high-efficiency converter design. However, the dynamic on-resistance of GaN devices still remains a major concern....

Polar Semiconductor and Nexperia have announced a collaboration to make next-generation power MOSFET devices at Polar's US-based wafer foundry. By combining Polar's expertise in power semiconductor manufacturing and ongoing...

Power Integrations (PI) has introduced two ultra-slim, compact auxiliary power supply reference designs for NVIDIA Kyber 800 VDC AI data centers. “As the only company offering single-HEMT 1700 V GaN devices,...

The next wave of value creation in artificial intelligence may lie in software that designs airplanes, nuclear reactors, electronic components, or data centers...