Gallium nitride (GaN) is a wide-bandgap semiconductor used for high-efficiency power transistors and integrated circuits. The first GaN power electronic devices have demonstrated disruptive performance and reduction of the form factor. GaN-based high electron mobility transistors allow innovative designs for space applications. Reducing the inductive parasitics and optimising the inductive passive components are key to unlocking the potential of this technology. The EU-funded EleGaNT project aims to demonstrate a higher level of integration between GaN and integrated circuits. The project will demonstrate improved designs of GaN integrated circuits and passive devices and of point-of-load convertor boards.
Pour en savoir plus : GaN Transistor Integrated Circuits
