Pour en savoir plus : NoMIS Power improves short-circuit withstand time for SiC MOSFETsThis innovation benefits renewable energy, electric transportation, and high-power industrial applications.
NoMIS Power has improved short-circuit withstand time (SCWT) of SiC MOSFETs, addressing a key challenge in adopting SiC technology for high-power applications. Silicon carbide (SiC) devices are widely used in power electronics for their efficiency, fast switching, and thermal performance. However, their lower short-circuit robustness compared to silicon-based IGBTs has limited their use in high-voltage, high-reliability applications such as industrial drives, electric vehicles, and grid systems.
