STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features for greater efficiency and robustness.
The latest STDRIVEG610 and STDRIVEG611 give designers two options to manage GaN devices in power conversion and motion applications for greater efficiency, power density and ruggedness in consumer and industrial applications.
The STDRIVEG610 addresses applications requiring an extremely fast 300ns start-up time which is an important parameter for converter topologies like LLC or ACF ensuring accurate controlled turn-off intervals in burst mode.
