{"id":57981,"date":"2026-06-08T08:56:28","date_gmt":"2026-06-08T06:56:28","guid":{"rendered":"https:\/\/www.nae.fr\/2026\/06\/08\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\/"},"modified":"2026-06-08T08:56:28","modified_gmt":"2026-06-08T06:56:28","slug":"design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts","status":"publish","type":"post","link":"https:\/\/nae-pp.dev-webadn.com\/en\/2026\/06\/08\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\/","title":{"rendered":"Design of a Fast Dynamic On-Resistance Measurement Circuit for GaN Power HEMTs"},"content":{"rendered":"<blockquote>\n<div class=\"summary\">\n<div class=\"crayon article-chapo-51727 article__chapo\">\n\nGallium Nitride (GaN) devices are becoming an attractive option in industry to achieve high-power-density and high-efficiency converter design. However, the dynamic on-resistance of GaN devices still remains a major concern. In this paper, a new dynamic on-resistance measurement circuit is proposed for fast-switching GaN power HEMTs. Simple circuit design, fast sensing speed, and accurate measurement can be realized with exclusively passive components. Compared with existing circuits, detailed component selection guidelines to realize fast sensing speed is discussed considering the switching transients.\n\n<\/div>\n<\/div><\/blockquote>\nPour en savoir plus :\u00a0<a href=\"https:\/\/ieeexplore.ieee.org\/document\/8450093\" target=\"_blank\" rel=\"noopener\">Design of a Fast Dynamic On-Resistance Measurement Circuit for GaN Power HEMTs<\/a>","protected":false},"excerpt":{"rendered":"<p>Gallium Nitride (GaN) devices are becoming an attractive option in industry to achieve high-power-density and high-efficiency converter design. However, the dynamic on-resistance of GaN devices still remains a major concern. In this paper, a new dynamic on-resistance measurement circuit is proposed for fast-switching GaN power HEMTs. Simple circuit design, fast sensing speed, and accurate measurement [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":57982,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[34,16],"tags":[35,45,30],"class_list":["post-57981","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-innovation-et-technologique","category-rti","tag-actualites","tag-electrification-et-fiabilite-des-systemes-embarques","tag-fiabilite-des-systemes-et-des-composants"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v28.6 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Design of a Fast Dynamic On-Resistance Measurement Circuit for GaN Power HEMTs - NAE<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.nae.fr\/2026\/06\/08\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Design of a Fast Dynamic On-Resistance Measurement Circuit for GaN Power HEMTs - NAE\" \/>\n<meta property=\"og:description\" content=\"Gallium Nitride (GaN) devices are becoming an attractive option in industry to achieve high-power-density and high-efficiency converter design. However, the dynamic on-resistance of GaN devices still remains a major concern. In this paper, a new dynamic on-resistance measurement circuit is proposed for fast-switching GaN power HEMTs. Simple circuit design, fast sensing speed, and accurate measurement [&hellip;]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.nae.fr\/2026\/06\/08\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\/\" \/>\n<meta property=\"og:site_name\" content=\"NAE\" \/>\n<meta property=\"article:published_time\" content=\"2026-06-08T06:56:28+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/logo-IEEE-Xplore-2.png\" \/>\n\t<meta property=\"og:image:width\" content=\"223\" \/>\n\t<meta property=\"og:image:height\" content=\"200\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/png\" \/>\n<meta name=\"author\" content=\"adminwa\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"adminwa\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/06\\\/08\\\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/06\\\/08\\\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\\\/\"},\"author\":{\"name\":\"adminwa\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#\\\/schema\\\/person\\\/3d658e930f01449b7195ce4a78fcfc1e\"},\"headline\":\"Design of a Fast Dynamic On-Resistance Measurement Circuit for GaN Power HEMTs\",\"datePublished\":\"2026-06-08T06:56:28+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/06\\\/08\\\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\\\/\"},\"wordCount\":109,\"commentCount\":0,\"publisher\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/#organization\"},\"image\":{\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/06\\\/08\\\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/nae-pp.dev-webadn.com\\\/wp-content\\\/uploads\\\/2026\\\/06\\\/logo-IEEE-Xplore-2.png\",\"keywords\":[\"Actualit\u00e9s\",\"Electrification et fiabilit\u00e9 des syst\u00e8mes embarqu\u00e9s\",\"Fiabilit\u00e9 des syst\u00e8mes et des composants\"],\"articleSection\":[\"Innovation et technologique\",\"RTI\"],\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"CommentAction\",\"name\":\"Comment\",\"target\":[\"https:\\\/\\\/www.nae.fr\\\/2026\\\/06\\\/08\\\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\\\/#respond\"]}]},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/06\\\/08\\\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\\\/\",\"url\":\"https:\\\/\\\/www.nae.fr\\\/2026\\\/06\\\/08\\\/design-of-a-fast-dynamic-on-resistance-measurement-circuit-for-gan-power-hemts\\\/\",\"name\":\"Design of a Fast Dynamic On-Resistance Measurement Circuit for GaN Power HEMTs - 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