{"id":55691,"date":"2025-06-02T08:20:58","date_gmt":"2025-06-02T06:20:58","guid":{"rendered":"https:\/\/www.nae.fr\/2025\/06\/02\/transistors-hemt-gan-rad-hard-pour-conceptions-spatiales\/"},"modified":"2025-06-02T08:20:58","modified_gmt":"2025-06-02T06:20:58","slug":"transistors-hemt-gan-rad-hard-pour-conceptions-spatiales","status":"publish","type":"post","link":"https:\/\/nae-pp.dev-webadn.com\/en\/2025\/06\/02\/transistors-hemt-gan-rad-hard-pour-conceptions-spatiales\/","title":{"rendered":"Transistors HEMT GaN Rad-Hard pour conceptions spatiales"},"content":{"rendered":"<p class=\"wp-block-paragraph\"><blockquote>Infineon Technologies a lanc\u00e9 une famille de transistors en nitrure de gallium (GaN) r\u00e9sistants aux radiations, fabriqu\u00e9s en interne dans sa propre fonderie.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">Les transistors GaN \u00e0 haute mobilit\u00e9 d\u2019\u00e9lectrons (HEMT) sont bas\u00e9s sur la technologie CoolGaN d\u2019Infineon et sont certifi\u00e9s pour leur fiabilit\u00e9 par l\u2019Agence logistique de la d\u00e9fense des \u00c9tats-Unis (DLA) selon la sp\u00e9cification MIL-PRF-19500\/794 de l\u2019Arm\u00e9e de terre, de la Marine et de l\u2019Espace (JANS).<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">Ces composants peuvent \u00eatre utilis\u00e9s pour les satellites en orbite, l\u2019exploration spatiale habit\u00e9e et les sondes de l\u2019espace lointain, et s\u2019ajoutent \u00e0 la gamme de MOSFET en silicium durci aux radiations. Infineon r\u00e9alise \u00e9galement plusieurs lots avant le lancement complet de la production JANS afin de garantir la fiabilit\u00e9 de la fabrication \u00e0 long terme.<\/blockquote><br>Pour en savoir plus : <a href=\"https:\/\/www.ecinews.fr\/fr\/transistors-hemt-gan-rad-hard-pour-conceptions-spatiales\/\" target=\"_blank\" rel=\"noopener\">Transistors HEMT GaN Rad-Hard pour conceptions spatiales<\/a><\/p>","protected":false},"excerpt":{"rendered":"<p>Infineon Technologies a lanc\u00e9 une famille de transistors en nitrure de gallium (GaN) r\u00e9sistants aux radiations, fabriqu\u00e9s en interne dans sa propre fonderie. Les transistors GaN \u00e0 haute mobilit\u00e9 d\u2019\u00e9lectrons (HEMT) sont bas\u00e9s sur la technologie CoolGaN d\u2019Infineon et sont certifi\u00e9s pour leur fiabilit\u00e9 par l\u2019Agence logistique de la d\u00e9fense des \u00c9tats-Unis (DLA) selon la [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":55692,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[22,34,16],"tags":[35,45,30],"class_list":["post-55691","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualite-defense-et-securite","category-innovation-et-technologique","category-rti","tag-actualites","tag-electrification-et-fiabilite-des-systemes-embarques","tag-fiabilite-des-systemes-et-des-composants"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v28.6 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Transistors HEMT GaN Rad-Hard pour conceptions spatiales | Ton Site<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.nae.fr\/2025\/06\/02\/transistors-hemt-gan-rad-hard-pour-conceptions-spatiales\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Transistors HEMT GaN Rad-Hard pour conceptions spatiales | Ton Site\" \/>\n<meta property=\"og:description\" content=\"Infineon Technologies a lanc\u00e9 une famille de transistors en nitrure de gallium (GaN) r\u00e9sistants aux radiations, fabriqu\u00e9s en interne dans sa propre fonderie. Les transistors GaN \u00e0 haute mobilit\u00e9 d\u2019\u00e9lectrons (HEMT) sont bas\u00e9s sur la technologie CoolGaN d\u2019Infineon et sont certifi\u00e9s pour leur fiabilit\u00e9 par l\u2019Agence logistique de la d\u00e9fense des \u00c9tats-Unis (DLA) selon la [&hellip;]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.nae.fr\/2025\/06\/02\/transistors-hemt-gan-rad-hard-pour-conceptions-spatiales\/\" \/>\n<meta property=\"og:site_name\" content=\"NAE\" \/>\n<meta property=\"article:published_time\" content=\"2025-06-02T06:20:58+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.nae.fr\/wp-content\/uploads\/2026\/06\/Transistors-HEMT-GaN-Rad-Hard-pour-conceptions-spatiales.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"321\" \/>\n\t<meta property=\"og:image:height\" content=\"234\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"adminwa\" \/>\n<meta name=\"twitter:card\" 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