Gallium Nitride (GaN) devices are becoming an attractive option in industry to achieve high-power-density and high-efficiency converter design. However, the dynamic on-resistance of GaN devices still remains a major concern. In this paper, a new dynamic on-resistance measurement circuit is proposed for fast-switching GaN power HEMTs. Simple circuit design, fast sensing speed, and accurate measurement can be realized with exclusively passive components. Compared with existing circuits, detailed component selection guidelines to realize fast sensing speed is discussed considering the switching transients.
