This work presents a comprehensive study on the behaviour and operation of a vertical 1.2 kV 4H-SiC junctionless power FinFET. The increased bulk conduction in the channel of this topology may bring reductions in the channel resistance compared to trench MOSFETs,...
With increasing applications of silicon carbide (SiC) power MOSFETs, more attention is being paid to reliability issues, among which the long-term stability of the gate threshold voltage is of paramount importance. In this study, laboratory experiments are conducted...
Taking camera shots from drones has become a common practice among videographers. However, one limitation of taking videos on drones is limited camera audio due to the sound of the drone. The noise caused by the operation of the drone renders any audio captured from...
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fabrication Additive qui abordera : [tel-03267701] Micro-fabrication additive des filtres à fort facteur...
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Composite qui abordera : Assembly and Method to Repair Thermoplastic Composites Source :...
