We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device...
In this paper, the advantages of SiC power modules to reduce peak junction temperature and power cycling effects are presented. A detailed power loss calculation and thermal model is developed and tested on a 480 V, 190A, 150 HP variable frequency drive (VFD) with SiC...
Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to realize on-line temperature monitoring. However, it remains a...
Although GaN high electron mobility transistors (HEMTs) are one of the most promising semiconductor technologies for high power and high frequency applications, high device temperatures often lead to degraded performance and reliability. Most reports on the thermal...
For various pulsed power electronics like, metal oxide semiconductor field-effect transistor (MOSFET), insulating gate bipolar transistor (IGBT), Gate turn-off thyristor (GTO), Integrated gate-commutated thyristor (IGCT), heat loads are often in the range of 10W/cm2...
