GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has announced availability of its GaN transistor ADS (Advanced Design System) models to facilitate...
Des drones indispensables Les munitions rôdeuses sont très rapidement devenues des matériels indispensables dans le cadre d’un conflit de haute intensité. L’Azerbaïdjan s’était équipé de munitions rôdeuses Harop, Orbiter et Skystriker israélien. Or, durant...
In this work we analysed the performance of AlGaN/GaN HEMT based on the linearity metrics for variable source/drain spacing with a fixed gate length (1μm) using Sentaurus TCAD device simulator. Various figure of merits such as transconductance, higher order...
According to Yole’s Compound Semiconductor Quarterly Market Monitor on SiC and GaN applications, SiC device market revenue continues its growth and is expected to exceed $3 billion by 2025 with EV/HEV the killer application. Meanwhile, Yole projects that the...
Innoscience Technology, entreprise fondée pour créer un écosystème énergétique mondial basé sur des solutions de puissance au nitrure de gallium sur silicium (GaN-on-Si) à la fois performantes et rentables, lance aujourd’hui le INN40W08, un transistor à haute...
