Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique.
Aujourd’hui retrouvez sa veille n°1 sur la thématique fiabilité électronique qui abordera :
- A new characterization technique for extracting parasitic inductances of sic power mosfets in discrete and module packages based on two port s-parameters measurement
- Method for growing gan crystal and c-plane gan substrate
- Stacking fault-free semipolar and nonpolar gan grown on foreign substrates by eliminating the nitrogen polar facets during the growth
- GaN-based Field-Effect Transistors with Laterally Gated Two-Dimensional Electron Gas
- Zero-Voltage Switching Full-Bridge T-type Isolated DC/DC Converter with Wide Input Voltage Range and Balanced Switch Currents
- Method of increase of threshold barrier voltage of gan transistor
- Integrated ESD Protection Circuit for GaN Based Device
- Method for statistically analyzing process parameters of gan device based on large-signal equivalent circuit model
- Silver sintering die attachment for power chip in power module
- Gan-on-si semiconductor device structures for high current/ high voltage lateral gan transistors and methods of fabrication thereof
- Reliable electrical contacts for high power photoconductive switches
